Microelectronics Failure Analysis: Desk ReferenceASM International, 2004 M01 1 - 800 páginas For newcomers cast into the waters to sink or swim as well as seasoned professionals who want authoritative guidance desk-side, this hefty volume updates the previous (1999) edition. It contains the work of expert contributors who rallied to the job in response to a committee's call for help (the committee was assigned to the update by the Electron |
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applications ASM International backside capacitance capacitor carriers cause circuitry CMOS components contamination copper crack cross section cross-section damage defect delamination deposition deprocessing Desk Reference detector die attach dielectric diode edit effect electrical electron beam emission energy etch failing failure analysis failure mechanisms failure mode flip chip Focused Ion Beam function gate oxide heat increase integrated circuit interconnect interface ion beam ISTFA laser latchup layer leakage liquid crystal low-k magnification material measurement MEMS metal Microelectronics Failure Analysis microns microscopy optical package photoemission photon physical plasma polishing polysilicon probe Proc region removed resistance result sample preparation scan schematic semiconductor short shown in Figure shows signal silicon solder structure substrate surface techniques temperature Testing and Failure thermal thermography thickness thin tool transistor typically VCSEL wafer waveform wavelength wire bond x-ray